Aim
- Transient
and DC Analysis of NAND Gate inverter.
Simulator
Used
– PSpice.
Theory
– P-channel MOSFETs Q1 and Q2 are connected
in series and N-channel MOSFETs Q3 and Q4 are connected in parallel.
This circuit can be analyzed by realizing that a LOW at any input turns ON its
corresponding P-channel MOSFET and turns OFF its corresponding N-channel MOSFET,
and vice versa for a HIGH input.
Circuit
Diagram –
Result
–
Conclusion - Transient
and DC Analysis of NAND Gate inverter has been performed.
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